Micron Develops uMCP with LPDDR5 & 96L 3D NAND for Midrange 5G Smartphones

Micron this week has announced that it has started sampling the industry’s first multichip package (MCP) that integrates LPDDR5-6400 DRAM and 96-layer 3D NAND flash memory. The uMCP5 device is aimed at midrange 5G smartphones that require fast DRAM as well as high-performance storage.

Micron’s uMCP5 device packs 12 GB of LPDDR5-6400 memory in a dual-channel arrangement, 256 GB of 96-layer 3D TLC NAND storage with a UFS interface, as well as an onboard controller. The LPDDR5 dies are made on the company's 2^nd Generation 10nm process technology, while the company hasn't commented on the NAND. Combined, the complete uMCP5 chip uses a 297-pin standard BGA package.

Overall, uMCP packages that integrate both DRAM and 3D NAND enable smartphone manufacturers to reduce the footprint that is needed for RAM and storage. Micron says that its uMCP5 uses 40% less space than two (separate) memory chips, while also providing a 50% increase of memory and storage bandwidth when compared to previous-generation solutions.

All told, Micron's latest uMCP devices come as demand for LPDDR5 is taking off, and demand for higher performance storage overall is booming. On top of 5G's faster speeds putting more demand on quick local storage, the latest handsets in general feature increasingly better cameras and displays than predecessors, all of which generates more data to load and store. So there's a need for faster memory and non-volatile storage, not only for 5G smartphones, but higher-end 4G/LTE smartphones as well.

Micron’s uMCP5 package is currently sampling to select partners.

Related Reading:

• Samsung Starts Production of 16 GB LPDDR5-5500 for Smartphones
• Micron Shipping LPDDR5 DRAM
• Samsung Starts Production of LPDDR5-5500 Devices: 12 GB of DRAM in a Smartphone
• Micron’s DRAM Update: More Capacity, Four More 10nm-Class Nodes, EUV, 64 GB DIMMs
• Micron Obtains License to Sell DRAM & NAND to Huawei

Source: Micron