Samsung Foundry is set to detail its second generation 3 nm-class fabrication technology as well as its performance-enhanced 4 nm-class manufacturing process at the upcoming upcoming 2023 Symposium on VLSI Technology and Circuits in Kyoto, Japan. Both technologies are important for the contract maker of chips as SF3 (3GAP) promises to offer tangible improvements for mobile and SoCs, whereas SF4X (N4HPC) is designed specifically for the most demanding high-performance computing (HPC) applications. 2nd Generation 3 nm Node with GAA Transistors Samsung's upcoming SF3 (3GAP) process technology is an enhanced version of the company's SF3E (3GAE) fabrication process, and relies on its second-generation gate-all-around transistors – which the company calls Multi-Bridge-Channel field-effect transistors (MBCFETs). The node promises additional process optimizations, though the foundry prefers not to compare...
Capping off a multi-year development process, Samsung’s foundry group sends word this morning that the company has officially kicked off production on its initial 3nm chip production line. Samsung’s...22 by Ryan Smith on 6/30/2022
Last month Samsung Foundry quietly announced that it was set to begin producing chips using its 3GAE (3 nm-class, gate-all-around transistors, early) process technology in the second quarter. While...17 by Anton Shilov on 5/12/2022
Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors...32 by Anton Shilov on 7/9/2021