Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors (MBCFETs). Based on new information direct from Samsung, it would appear that its first version of 3nm, 3GAE (3nm gate-all-around early), is coming to high volume manufacturing a year later than expected, but also it seems to have removed this technology from its public roadmap, suggesting it may be for internal use only. Meanwhile, 3GAE's successor 3GAP (3nm gate-all-around plus) node is still in the roadmap, it is on track for volume manufacturing in 2023. 3GAE on Track for 2022, Maybe Just Not for Everyone At its recent 2021 IP & ASIC Design Ecosystem Conference in China, Samsung...
Samsung’s Aggressive EUV Plans: 6nm Production in H2, 5nm & 4nm On Track
Samsung Foundry formally started to produce chips using its 7LPP (7 nm low power plus) fabrication process last October and has not slowdown development of its manufacturing technologies since...42 by Anton Shilov on 7/31/2019
Samsung Foundry Updates: 8LPU Added, EUVL on Track for HVM in 2019
Samsung recently hosted its Samsung Foundry Forum 2018 in Japan, where it made several significant foundry announcements. Besides reiterating plans to start high-volume manufacturing (HVM) using extreme ultraviolet lithography...29 by Anton Shilov on 9/6/2018